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Silicon Carbide, Volume 1: Growth, Defects, and Novel Applications

Peter Friedrichs (Editor), Tsunenobu Kimoto (Editor), Lothar Ley (Editor), Gerhard Pensl (Editor)
ISBN: 978-3-527-40953-2
Hardcover
528 pages
December 2009
List Price: US $215.00
Government Price: US $148.44
Enter Quantity:   Buy
Silicon Carbide, Volume 1: Growth, Defects, and Novel Applications (352740953X) cover image
This is a Print-on-Demand title. It will be printed specifically to fill your order. Please allow an additional 10-15 days delivery time. The book is not returnable.

"At this stage, the two volumes provide an up-to-date, comprehensive, and critical assessment of all aspects of SiC semiconductor technology with an emphasis on power electronics . . . The contributions are written by internationally renowned experts from industry as well as academia who are actively involved in SiC R&D. Hence, the two volumes provide and evaluate source of information for everybody working with SiC or generally interested in the current and future state of power electronics". (Int. Journal of Microstructure and Materials Properties, 2011)

 

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