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Insulated Gate Bipolar Transistor IGBT Theory and Design

Vinod Kumar Khanna
ISBN: 978-0-471-23845-4
Hardcover
648 pages
August 2003, Wiley-IEEE Press
List Price: US $205.00
Government Price: US $141.40
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Insulated Gate Bipolar Transistor IGBT Theory and Design (0471238457) cover image
This is a Print-on-Demand title. It will be printed specifically to fill your order. Please allow an additional 10-15 days delivery time. The book is not returnable.

A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT.
  • All-in-one resource
  • Explains the fundamentals of MOS and bipolar physics.
  • Covers IGBT operation, device and process design, power modules, and new IGBT structures.

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