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Insulated Gate Bipolar Transistor IGBT Theory and Design

ISBN: 978-0-471-23845-4
Hardcover
648 pages
August 2003, Wiley-IEEE Press
List Price: US $205.00
Government Price: US $141.40
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Preface.

Power Device Evolution and the Advert of IGBT.

IGBT Fundamentals and Status Review.

MOS Components of IGBT.

Bipolar Components of IGBT.

Physics and Modeling of IGBT.

Latch-Up of Parasitic Thyristor in IGBT.

Design Considerations of IGBT Unit Cell.

IGBT Process Design and Fabrication Technology.

Power IGBT Modules.

Novel IGBT Design Concepts, Structural Innovations, and Emerging Technologies.

IGBT Circuit Applications.

Index.

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