Silicon Carbide, Volume 2: Power Devices and Sensors

1) Present Status and Future Prospects for Electronics in EVs/HEVs and Expectations for Wide Bandgap Semiconductor Devices
2) Silicon Carbide power devices -
Status and upcoming challenges with a special attention to industrial application
3) Effect of an intermediate graphite layer on the electronic properties of metal/SiC contacts
4) Reliability aspects of SiC Schottky Diodes
5) Design, process, and performance of all-epitaxial normally-off SiC JFETs
6) Extreme Temperature SiC Integrated Circuit Technology
7) 1200 V SiC Vertical-channel-JFET based cascode switches
8) Alternative techniques to reduce interface traps in n-type 4H-SiC MOS capacitors
9) High electron mobility ahieved in n-channel 4H-SiC MOSFETs oxidized in the presence of nitrogen
10) 4H-SiC MISFETs with Nitrogen-containing Insulators
11) SiC Inversion Mobility
12) Development of SiC diodes, power MOSFETs and intellegent Power Modules
13) Reliability issues of 4H-SiC power MOSFETs toward high junction temperature operation
14) Application of SiC-Transistors in Photovoltaic-Inverters
15) Design and Technology Considerations for SiC Bipolar Devices: BJTs, IGBTs,and GTOs
16) Suppressed surface recombination structure and surface passivation for improving current gain of 4H-SiC BJTs
17) SiC avalanche photodiodes and photomultipliers for ultraviolet and solar-blind light detection