Silicon Non-Volatile Memories: Paths of InnovationISBN: 978-1-84821-105-6
Hardcover
256 pages
September 2009, Wiley-ISTE
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This book provides a comprehensive overview of the different
technological approaches currently being studied to fulfill future
memory requirements. Two main research paths are identified and
discussed. Different “evolutionary paths” based on new
materials and new transistor structures are investigated to extend
classical floating gate technology to the 32 nm node.
“Disruptive paths” are also covered, addressing 22 nm
and smaller IC generations. Finally, the main factors at the origin
of these phenomena are identified and analyzed, providing pointers
on future research activities and developments in this area.