GaAs High-Speed Devices: Physics, Technology, and Circuit ApplicationsISBN: 978-0-471-85641-2
Hardcover
612 pages
October 1994
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The Development of Gallium Arsenide Devices and IntegratedCircuits.
Gallium Arsenide Crystal Structure and Growth.
Epitaxial Growth Processes.
Process Techniques.
Lithography.
Device-Related Physics and Principles.
Metal-to-GaAs Contacts.
GaAs Metal-Semiconductor Field-Effect Transistor.
High Electron-Mobility Transistor (HEMT).
Heterojunction Bipolar Transistors.
Resonant-Tunneling Transistors.
Hot-Electron Transistors and Novel Devices.
GaAs FET Amplifiers and Monolithic Microwave IntegratedCircuits.
GaAs Digital Integrated Circuits.
High-Speed Photonic Devices.
Index.
Gallium Arsenide Crystal Structure and Growth.
Epitaxial Growth Processes.
Process Techniques.
Lithography.
Device-Related Physics and Principles.
Metal-to-GaAs Contacts.
GaAs Metal-Semiconductor Field-Effect Transistor.
High Electron-Mobility Transistor (HEMT).
Heterojunction Bipolar Transistors.
Resonant-Tunneling Transistors.
Hot-Electron Transistors and Novel Devices.
GaAs FET Amplifiers and Monolithic Microwave IntegratedCircuits.
GaAs Digital Integrated Circuits.
High-Speed Photonic Devices.
Index.