Ionizing Radiation Effects in MOS Devices and CircuitsISBN: 978-0-471-84893-6
Hardcover
608 pages
April 1989
 This is a Print-on-Demand title. It will be printed specifically to fill your order. Please allow an additional 10-15 days delivery time. The book is not returnable.
|
||||||
Historical Perspective (H. Hughes).
Electron-Hole Generation, Transport, and Trapping in SiO2 (F.McLean, et al.).
Radiation-Induced Interface Traps (P. Winokur).
Radiation Effects on MOS Devices and Circuits (P.Dressendorfer).
Radiation-Hardening Technology (P. Dressendorfer).
Process-Induced Radiation Effects (T. Ma).
Source Considerations and Testing Techniques (K. Kerris).
Transient-Ionization and Single-Event Phenomena (S. Kerns).
Index.
Electron-Hole Generation, Transport, and Trapping in SiO2 (F.McLean, et al.).
Radiation-Induced Interface Traps (P. Winokur).
Radiation Effects on MOS Devices and Circuits (P.Dressendorfer).
Radiation-Hardening Technology (P. Dressendorfer).
Process-Induced Radiation Effects (T. Ma).
Source Considerations and Testing Techniques (K. Kerris).
Transient-Ionization and Single-Event Phenomena (S. Kerns).
Index.
Related Titles
Noise in Electronic Systems
.png){kind=small}
Join An E-mail ListLearn about the latest products, events, offers and content. |
