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Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe

ISBN: 978-0-471-35827-5
Hardcover
216 pages
February 2001
List Price: US $167.50
Government Price: US $115.80
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Properties of Advanced Semiconductor Materials: GaN, AIN, InN, BN, SiC, SiGe (0471358274) cover image
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Contributors.

Preface.

Gallium Nitride (GaN) (V. Bougrov, et al.).

Aluminum Nitride (AIN) (Y. Goldberg).

Indium Nitride (InN) (A. Zubrilov).

Boron Nitride (BN) (S. Rumyantsev, et al.).

Silicon Carbide (SiC) (Y. Goldberg, et al.).

Silicon-Germanium (Si_1-xGe_x) (F. Schäffler).

Appendix 1: Basic Physical Constants.

Appendix 2: Periodic Table of the Elements.

Appendix 3: Rectangular Coordinates for Hexagonal Crystal.

Appendix 4: The First Brillouin Zone for Wurtzite Crystal.

Appendix 5: Zinc Blende Structure.

Appendix 6: The First Brillouin Zone for Zinc Blende Crystal.

Additional References.
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