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SiGe Heterojunction Bipolar Transistors

Peter Ashburn
ISBN: 978-0-470-84838-8
Hardcover
272 pages
December 2003
List Price: US $183.00
Government Price: US $105.56
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Preface.

Physical Constants Properties of Silicon and Silicon-Germanium.

List of Symbols.

1. Introduction.

2. Basic Bipolar Transistor Theory.

3. Heavy Doping Effects.

4. Second-Order Effects.

5. High-Frequency Performance.

6. Polysilicon Emitters.

7. Properties and Growth of  Silicon-Germanium.

8. Silicon-Germanium Heterojunction Bipolar Transistors.

9. Silicon Bipolar Technology.

10. Silicon-Germanium Heterojunction Bipolar Technology.

11. Compact Models of Bipolar Transistors.

12. Optimization of Silicon and Silicon-Germanium Bipolar Technologies.

References.

Index.

 

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